digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n4212-2N4216, 2n4219 silicon controlled rectifiers 1.6 amps rms, 25-400 volts available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive forward and reverse blocking voltage (1) 2n4212 2n4213 2n4214 2N4216 2n4219 v drm or v rrm 25 50 100 200 400 volts forward current rms (all conduction angles) i t(rms) 1.6 amps peak surge current (one cycle, 60hz) no repetition until thermal equilibrium is restored i tsm 15 amps forward peak gate power p gfm 0.1 watt forward average gate power p gf(av) 0.01 watt forward peak gate current i gfm 0.1 amp forward peak gate voltage v gfm 6 volts reverse peak gate voltage v grm 6 volts operating junction temperature range t j -65 to 125 c storage temperature range t stg -65 to 150 c lead solder temperature (> 1/16? from case, 10 s max.) - 230 c note 1: v drm and v rrm can be applied for all types on a continuous dc basis without incurring damage. electrical characteristics (t c = 25c unless otherwise noted, r gk = 1000ohms) (1) characteristic symbol min max unit peak forward or reverse blocking current (rated v drm or v rrm , gate open) t j = 25c t j = 125c i drm , i rrm - - 10 200 a forward ?on? voltage (i tm = 1adc peak) v tm - 1.5 volts gate trigger current (continuous dc) (2) (v d = 7v, r l = 100ohms) (t c = 25c) (t c = -65c) i gt - - 100 300 adc gate trigger voltage (continuous dc) (v d = 7v, r l = 100ohms, t c = 25c) (v d = 7v, r l = 100ohms, t c = -65c) (v d = rated v drm , r l = 100ohms, t j = 125c) v gt - - 0.1 0.8 1 - volts holding current (v d = 7v) t c = 25c t c = -65c i hx - - 3 7 ma note 1: thyristor devices shall not be tested with a constant current source for forward or re verse blocking capability such th at the voltage applied exceeds the rated blocking voltage. thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode. note 2: r gk current is not included in the measurement. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130108
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n4212-2N4216, 2n4219 silicon controlled rectifiers 1.6 amps rms, 25-400 volts mechanical characteristics case to-39 marking alpha-numeric pin out see below to-39 inches millimeters min max min max a 0.335 0.370 8.510 9.390 b 0.305 0.335 7.750 8.500 c 0.240 0.260 6.100 6.600 d 0.016 0.021 0.410 0.530 e 0.009 0.041 0.230 1.040 f 0.016 0.019 0.410 0.480 g 0.200 bsc 5.080 bsc h 0.028 0.034 0.720 0.860 j 0.029 0.045 0.740 1.140 k 0.500 0.750 12.700 19.050 l 0.250 - 6.350 - m 45c bsc 45c bsc p - 0.050 - 1.270 r 0.100 - 2.540 - case temperature vs. current ambient temperature vs. current sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130108
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